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MT41K512M16HA-125IT Memory IC With 8Gbit Parallel 800 MHz 13.5 ns 96-FBGA

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MT41K512M16HA-125IT Memory IC With 8Gbit Parallel 800 MHz 13.5 ns 96-FBGA

Brand Name : original

Model Number : MT41K512M16HA-125IT:A

Certification : original

Place of Origin : original

MOQ : 1

Price : negotiation

Payment Terms : T/T

Supply Ability : 100,000

Delivery Time : 1-3working days

Packaging Details : carton box

Technology : SDRAM - DDR3L

Memory Size : 8Gbit

Memory Organization : 512M x 16

Memory Interface : Parallel

Clock Frequency : 800 MHz

Access Time : 13.5 ns

Voltage - Supply : 1.283V ~ 1.45V

Operating Temperature : -40°C ~ 95°C (TC)

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MT41K512M16HA-125IT : A Memory IC With 8Gbit Parallel 800 MHz 13.5 ns 96-FBGA

MT41K512M16HA-125 IT:A IC DRAM 8GBIT PARALLEL 96FBGA

Specifications of MT41K512M16HA-125 IT:A

TYPE DESCRIPTION
Category Integrated Circuits (ICs)
Memory
Mfr Micron Technology Inc.
Series -
Package Tray
Product Status Obsolete
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 8Gbit
Memory Organization 512M x 16
Memory Interface Parallel
Clock Frequency 800 MHz
Write Cycle Time - Word, Page -
Access Time 13.5 ns
Voltage - Supply 1.283V ~ 1.45V
Operating Temperature -40°C ~ 95°C (TC)
Mounting Type Surface Mount
Package / Case 96-TFBGA
Supplier Device Package 96-FBGA (9x14)
Base Product Number MT41K512M16


Features of MT41K512M16HA-125 IT:A


• VDD = VDDQ = 1.35V (1.283–1.45V)
• Backward compatible to VDD = VDDQ = 1.5V ±0.075V
– Supports DDR3L devices to be backward compatible in 1.5V applications
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Programmable CAS (READ) latency (CL)
• Programmable posted CAS additive latency (AL)
• Programmable CAS (WRITE) latency (CWL)
• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• TC of 95°C
– 64ms, 8192-cycle refresh up to 85°C
– 32ms, 8192-cycle refresh at >85°C to 95°C
• Self refresh temperature (SRT)
• Automatic self refresh (ASR)
• Write leveling
• Multipurpose register
• Output driver calibration

Descriptions of MT41K512M16HA-125 IT:A


DDR3L (1.35V) SDRAM is a low voltage version of the DDR3 (1.5V) SDRAM. Refer to a DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode.

Environmental & Export Classifications of MT41K512M16HA-125 IT:A

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0036

MT41K512M16HA-125IT Memory IC With 8Gbit Parallel 800 MHz 13.5 ns 96-FBGA



Product Tags:

MT41K512M16HA-125IT Memory IC

      

8Gbit Parallel Memory IC

      
Quality MT41K512M16HA-125IT Memory IC With 8Gbit Parallel 800 MHz 13.5 ns 96-FBGA for sale

MT41K512M16HA-125IT Memory IC With 8Gbit Parallel 800 MHz 13.5 ns 96-FBGA Images

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